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Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires.
- Source :
-
Nanotechnology . Jun2011, Vol. 22 Issue 24, p245203-245203. 1p. - Publication Year :
- 2011
-
Abstract
- Electrically driven lasing was demonstrated in light-emitting devices composed of n-ZnO and p-Si nanowires (NWs). The ZnO NWs were synthesized by thermal chemical vapor deposition and the Si NWs were formed by crystallographic wet etching of a Si wafer. The p-n heterojunction devices were constructed using the NWs by the direct transfer and dielectrophoresis methods. At an excitation current of 2 uA, the electroluminescence spectrum showed lasing behavior, and this phenomenon was explained by the ZnO-nanostructure-related cavity property. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 22
- Issue :
- 24
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 60377589
- Full Text :
- https://doi.org/10.1088/0957-4484/22/24/245203