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Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation
Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation
- Source :
-
Solid-State Electronics . Jul2011, Vol. 61 Issue 1, p96-99. 4p. - Publication Year :
- 2011
-
Abstract
- Abstract: The effect of ammonia gas on amorphous indium gallium zinc oxide thin film transistors is investigated. The ammonia is incorporated into the sputtered a-IGZO film during the deposition process. The results indicate that the sub-threshold swing of the NH3 incorporated TFTs is significantly improved from 2.8 to 1.0V/decade, and the hysteresis phenomenon is also suppressed during the forward and reverse sweeping measurement. By X-ray photoelectron spectroscopy analyses, Zn–N and O–H bonds are observed in ammonia incorporated a-IGZO film. Therefore, the improvements in the electrical performance of TFTs are attributed to the passivation of dangling bonds and/or defects by ammonia. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 61
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 60521345
- Full Text :
- https://doi.org/10.1016/j.sse.2011.01.001