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Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation

Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation

Authors :
Huang, Sheng-Yao
Chang, Ting-Chang
Chen, Min-Chen
Tsao, Shu-Wei
Chen, Shih-Ching
Tsai, Chih-Tsung
Lo, Hung-Ping
Source :
Solid-State Electronics. Jul2011, Vol. 61 Issue 1, p96-99. 4p.
Publication Year :
2011

Abstract

Abstract: The effect of ammonia gas on amorphous indium gallium zinc oxide thin film transistors is investigated. The ammonia is incorporated into the sputtered a-IGZO film during the deposition process. The results indicate that the sub-threshold swing of the NH3 incorporated TFTs is significantly improved from 2.8 to 1.0V/decade, and the hysteresis phenomenon is also suppressed during the forward and reverse sweeping measurement. By X-ray photoelectron spectroscopy analyses, Zn–N and O–H bonds are observed in ammonia incorporated a-IGZO film. Therefore, the improvements in the electrical performance of TFTs are attributed to the passivation of dangling bonds and/or defects by ammonia. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00381101
Volume :
61
Issue :
1
Database :
Academic Search Index
Journal :
Solid-State Electronics
Publication Type :
Academic Journal
Accession number :
60521345
Full Text :
https://doi.org/10.1016/j.sse.2011.01.001