Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.

Multigraphene films grown by sublimation on the surface of a semi-insulating 6 H-SiC substrate have been studied. It is shown that pregrowth annealing of the substrate in a quasiclosed growth cell improves the structural quality of a multigraphene film. Ohmic contacts to the film have been fabricated, and the Hall effect has been studied at low temperatures. It is found that a 2D electron gas exists in the films. It is concluded that the conductivity of the film is determined by defects existing within the graphene layer or at the interface between the graphene film and a SiC substrate. [ABSTRACT FROM AUTHOR]