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Microwave PtSi-Si schottky-barrier-detector diode fabrication using an implanted active layer on...

Authors :
Wu, Yunghong
Armstrong, B. Mervyn
Gamble, Harold S.
Hu, Zhirun
Chen, Qiang
Yang, Suidong
Fusco, Vincent F.
Stewart, J.A. Carson
Source :
IEEE Transactions on Microwave Theory & Techniques. May98 Part 2 of 2, Vol. 46 Issue 5, p641. 6p. 3 Black and White Photographs, 8 Diagrams, 2 Charts, 4 Graphs.
Publication Year :
1998

Abstract

Examines the development of a surface-oriented planar Schottky diode for use as a detector diode on silicon monolithic microwave integrated circuits (MIMIC). Information on the formation on the PtSi-Si barrier; Description of the process technology which was developed for the Schottky-detector diode fabrication; Identification of the typical measured cutoff frequency.

Subjects

Subjects :
*SCHOTTKY barrier diodes

Details

Language :
English
ISSN :
00189480
Volume :
46
Issue :
5
Database :
Academic Search Index
Journal :
IEEE Transactions on Microwave Theory & Techniques
Publication Type :
Academic Journal
Accession number :
607764
Full Text :
https://doi.org/10.1109/22.668676