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Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate
- Source :
-
Applied Surface Science . Jun2011, Vol. 257 Issue 17, p7893-7899. 7p. - Publication Year :
- 2011
-
Abstract
- Abstract: Bi-layer ZnO films with 2wt.% Al (AZO; ZnO:Al) and 4wt.% Ga-doped (GZO; ZnO:Ga) were deposited on the ZnO buffered and annealed ZnO buffered c(0001)-sapphire(Al2O3) substrates respectively by Pulsed Laser Deposition (PLD). The effect of crystallinity of ZnO buffer layer on the crystallinity and electrical properties of the AZO/GZO bi-layer thin films was investigated. It was seen that the crystallinity of ZnO buffer layer had a great influence on the orientation and defect density of AZO/GZO bi-layer thin films from X-ray Diffraction (XRD) peaks and High Resolution Transmission Electron Microscopy (HRTEM) images. In a word, it was found in the films that more preferred c-axis orientation texture and reduction of the defects such as stacking faults and dislocations, with increasing of the crystallinity of ZnO buffer layer. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 257
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 60786000
- Full Text :
- https://doi.org/10.1016/j.apsusc.2011.04.070