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Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss.
- Source :
-
IEEE Transactions on Electron Devices . Jun2011, Vol. 58 Issue 6, p1722-1727. 6p. - Publication Year :
- 2011
-
Abstract
- This paper presents, for the first time, the study of the application of a lateral diffused metal–oxide–semiconductor field-effect transistor (LDMOSFET) in a common-gate configuration to radio-frequency (RF) transmit/receive (T/R) switching circuits. A single-pole double-throw (SPDT) 900-MHz T/R switch is implemented using 0.25-\mu\m LDMOSFET foundry technology. Measured results show that our switching circuit can achieve a low insertion loss of 0.82 dB and a high power handling capability of 27 dBm. This result is promising in integrating power management integrated circuits, RF power amplifiers, and switching circuits in a single chip, based on LDMOSFET technology, to realize an RF transmit front-end system-on-chip solution. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 60831903
- Full Text :
- https://doi.org/10.1109/TED.2011.2127481