Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes

Abstract: In this work, we have prepared metal–insulator–metal capacitors for dynamic random access memory capacitor application using atomic layer deposition of TiO2 high-κ dielectric and RuO2 bottom electrode. We compare TiO2 layers grown using TiCl4 precursor or Ti-tetra-isopropoxide precursor, and Al-doped TiO2 layers grown using Ti-tetra-isopropoxide precursor. The capacitors were analyzed in the terms of capacitance – voltage and current – voltage measurements and transmission electron microscopy imaging. [Copyright &y& Elsevier]