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Dielectric reliability of 70nm pitch air-gap interconnect structures
- Source :
-
Microelectronic Engineering . Jul2011, Vol. 88 Issue 7, p1618-1622. 5p. - Publication Year :
- 2011
-
Abstract
- Abstract: Scaling air-gap interconnects to 70nm pitch is demonstrated for the first time by combining air-gap technology (SiO2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps compared to the SiO2 reference. The reliability performance of the air-gaps was then evaluated and it was found that the structures exceeded 10years lifetime at 2MV/cm, almost matching the performance of SiO2 interconnects. Air-gaps could therefore make a promising low-RC solution for future technology nodes. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 88
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 61171612
- Full Text :
- https://doi.org/10.1016/j.mee.2011.03.006