Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole-Frenkel current.

The compositional dependence of trap density and origin in thin silicon oxynitride (SiOxNy) films deposited by the low pressure chemical vapor deposition method was investigated using spin dependent Poole-Frenkel (SDPF) current technique. SDPF detected two kinds of traps, K-center (N3=Si·, where means a dangling bond) and K′-center (N2O=Si·). With increasing oxygen concentration, the amount of K-center decreases. On the other hand, K′-center increases up to O/O+N=0.25 and then it decreases. We propose the model that the change in the film strain by oxygen atoms induces these phenomena. [ABSTRACT FROM AUTHOR]