Back to Search
Start Over
Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states.
- Source :
-
Applied Physics Letters . 6/6/2011, Vol. 98 Issue 23, p233502. 3p. 3 Graphs. - Publication Year :
- 2011
-
Abstract
- The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method's simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature 'double peak' density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 98
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 61194336
- Full Text :
- https://doi.org/10.1063/1.3597298