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Determination of silicon nitride film chemical composition to study hydrogen desorption mechanisms

Authors :
Benoit, Daniel
Morin, Pierre
Regolini, Jorge
Source :
Thin Solid Films. Jul2011, Vol. 519 Issue 19, p6550-6553. 4p.
Publication Year :
2011

Abstract

Abstract: To go further in the comprehension of hydrogen desorption mechanisms from PECVD (Plasma Enhanced Chemical Vapour Deposited) silicon nitride, a method to determine the chemical composition of amorphous silicon nitride films using fast and non destructive characterization techniques has been developed. In particular, Silyph name="sbnd" />H, Sincentrations are calculated from Fourier transform infra red spectroscopy, ellipsometry and mass measurement. Next, different PECVD silicon nitride films were annealed at 600°C during 2min. Results show that hydrogen desorption from PECVD silicon nitride depends on film mass density and main chemical reactions leading to hydrogen desorption are identified thanks to the determination of Sincentrations. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00406090
Volume :
519
Issue :
19
Database :
Academic Search Index
Journal :
Thin Solid Films
Publication Type :
Academic Journal
Accession number :
61255221
Full Text :
https://doi.org/10.1016/j.tsf.2011.04.130