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Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection.
- Source :
-
IEEE Transactions on Electron Devices . Jul2011, Vol. 58 Issue 7, p1914-1921. 8p. - Publication Year :
- 2011
-
Abstract
- In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 61750537
- Full Text :
- https://doi.org/10.1109/TED.2011.2143717