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Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories.

Authors :
Ho, Yenpo
Huang, Garng M.
Li, Peng
Source :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Apr2011, Vol. 58 Issue 4, p724-736. 13p.
Publication Year :
2011

Abstract

Novel nonvolatile universal memory technology is essential for providing required storage for nanocomputing. As a potential contender for the next-generation memory, the recently found “the missing fourth circuit element,” memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to memory operations. Using our derived properties, we investigate the design of read and write circuits and analyze important data integrity and noise-tolerance issues. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
15498328
Volume :
58
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Circuits & Systems. Part I: Regular Papers
Publication Type :
Periodical
Accession number :
62331314
Full Text :
https://doi.org/10.1109/TCSI.2010.2078710