Cite
Effects of Design Geometries and Nonlinear Losses on Gain in Silicon Waveguides With Erbium-Doped Regions.
MLA
Qian, Feng, et al. “Effects of Design Geometries and Nonlinear Losses on Gain in Silicon Waveguides With Erbium-Doped Regions.” IEEE Journal of Quantum Electronics, vol. 47, no. 3, Mar. 2011, pp. 327–34. EBSCOhost, https://doi.org/10.1109/JQE.2010.2088379.
APA
Qian, F., Song, Q., Tien, E.-K., Kalyoncu, S. K., Huang, Y., & Boyraz, O. (2011). Effects of Design Geometries and Nonlinear Losses on Gain in Silicon Waveguides With Erbium-Doped Regions. IEEE Journal of Quantum Electronics, 47(3), 327–334. https://doi.org/10.1109/JQE.2010.2088379
Chicago
Qian, Feng, Qi Song, En-Kuang Tien, Salih K. Kalyoncu, Yuewang Huang, and Ozdal Boyraz. 2011. “Effects of Design Geometries and Nonlinear Losses on Gain in Silicon Waveguides With Erbium-Doped Regions.” IEEE Journal of Quantum Electronics 47 (3): 327–34. doi:10.1109/JQE.2010.2088379.