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Characterization of a junctionless diode.
- Source :
-
Applied Physics Letters . 7/4/2011, Vol. 99 Issue 1, p013502. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 2011
-
Abstract
- A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 108, an ideality factor of 1.09, and a reverse leakage current of 1 × 10-14 A at room temperature. The mechanism of the leakage current is discussed using the activation energy (EA). The turn-on voltage of the device can be tuned by JL transistor threshold voltage. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DIODES
*SILICON
*JUNCTION transistors
*SCHOTTKY barrier diodes
*ELECTRIC potential
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 62546996
- Full Text :
- https://doi.org/10.1063/1.3608150