Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5MeV protons

Abstract: An AlGaN/GaN HEMT was irradiated with 5MeV protons at a dose up to 2×1015/cm2. Photoluminescence spectra measured at 5K indicated that GaN lattice was severely damaged by collisions with high energy protons although distinct near band-edge features were still observable. An I DS–V DS measurement showed that the current level was decreased by 43% after proton irradiation, and an I GS–V GS measurement suggested that damage at the metal-contact/AlGaN interface was minimal. Transistor operation was found to be resistant to proton irradiation, which was partially attributed to a self-healing mechanism in proximity to the AlGaN/GaN interface. [Copyright &y& Elsevier]