Back to Search
Start Over
Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors.
- Source :
-
Applied Physics Letters . 9/2/1996, Vol. 69 Issue 10, p1411. 3p. 4 Graphs. - Publication Year :
- 1996
-
Abstract
- We report on the hot-electrons induced degradation in AlGaAs/GaAs high electron mobility transistors (HEMTs), consisting of a decrease in the drain current and an increase in the parasitic drain resistance. The amount of the degradation is proportional to the impact-ionization rate which is related to the electron energy. Transconductance dispersion measurements and drain current deep level transient spectroscopy (DLTS) have been used to identify interface traps which are located at the AlGaAs/GaAs interface in the gate-drain access region and are the causes of the observed degradation. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON mobility
*TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 69
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 6289254
- Full Text :
- https://doi.org/10.1063/1.117598