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Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method.
- Source :
-
Applied Physics Letters . 12/16/1996, Vol. 69 Issue 25, p3890. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 1996
-
Abstract
- The influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *X-rays
*STOICHIOMETRY
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 69
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 6289789
- Full Text :
- https://doi.org/10.1063/1.117560