Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions.

Pd films deposited at room temperature have been found to grow epitaxially on GaN grown by metalorganic vapor phase epitaxy (MOVPE). The Pd films were deposited on GaN substrates cleaned by chemicals only, and in a conventional e-beam evaporation system with a vacuum of ∼1×10-7 Torr. MeV 4He backscattering spectrometry and the Read x-ray camera were used to evaluate the Pd films. The effects of various chemical etchants—such as aqua regia, HCl:H2O, and HF:H2O—on the epitaxial quality of the Pd films have also been investigated. Ni and Pt films deposited on GaN in a similar manner were also found to be epitaxial. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]