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Cesiumoxide-GaAs interface and layer thickness in NEA surface formation.
- Source :
-
AIP Conference Proceedings . 2001, Vol. 570 Issue 1, p916. 4p. - Publication Year :
- 2001
-
Abstract
- Difference in NEA activation processes on GaAs(100) has been investigated with high resolution photoemission spectroscopy. It was found that the NEA surface produced by different activation processes cart be classified into three phases having characteristic chemical reactions of Cs and Oxygen with GaAs. A schematic phase diagram is presented to understand NEA activation processes. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM arsenide
*PHOTOEMISSION
Subjects
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 570
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 6310108