Low-frequency noise properties of selectively dry etched...

Provides information on a study in which the low-frequency noise of lattice-matched indium-phosphorus (InP) high electron mobility transistors (HEMT) gate recess, etched with a highly selective dry etching process and with conventional wet etching, were studied. Introduction on the development of HEMT; Examination of the drain and gate current noise under all bias conditions and temperatures; Conclusions.