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Impact of MOSFET Gate Oxide Breakdown on Digital Circuit Operation and Reliability.
- Source :
-
IEEE Transactions on Electron Devices . Mar2002, Vol. 49 Issue 3, p500. 7p. 2 Black and White Photographs, 2 Diagrams, 8 Graphs. - Publication Year :
- 2002
-
Abstract
- Describes a particular digital circuit that continues to operate even after the gate oxide in several of its field-effect transistors have undergone hard gate oxide breakdown. Basic parameters of the ring oscillator circuit; Cause of abrupt increases in supply current; Analysis of breakdown sequence.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 49
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 6339118
- Full Text :
- https://doi.org/10.1109/16.987122