Consistent Model for Short-Channel nMOSFET After Hard Gate Oxide Breakdown.

Authors :: Kaczer, Ben
Degraeve, Robin
De Keersgieter, An
Van de Mieroop, Koen
Simons, Veerle
Groeseneken, Guido
Source :: IEEE Transactions on Electron Devices. Mar2002, Vol. 49 Issue 3, p507. 7p. 1 Black and White Photograph, 3 Diagrams, 6 Graphs.
Publication Year :: 2002
Abstract: Relates the impact of hard gate-oxide breakdown on field effect transistor behavior to the position of the breakdown along the gate length. Detection of the breakdown; Device simulations; Number of postbreakdown characteristics corresponding to gate-to-extension and gate-to-substrate.