High-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1 μm.

Authors :: Wang, Z.
Bo, Y.
Xie, S.
Li, C.
Xu, Y.
Yang, F.
Xu, J.
Peng, Q.
Zhang, J.
Cui, D.
Xu, Z.
Source :: Applied Physics B: Lasers & Optics. Jul2011, Vol. 104 Issue 1, p45-52. 8p.
Publication Year :: 2011
Abstract: We demonstrate a high-power diode side-pumped Nd:YAG laser on the low gain three lines near 1.1 μm. By tuning the tilting angle of a solid etalon in the cavity, the laser can be selectively operated at 1112, 1116 and 1123 nm either in continuous-wave (CW) mode or in actively Q-switched (QS) mode, respectively. The highest average CW output powers were 75, 47 and 71 W at 1112, 1116 and 1123 nm, respectively. The transmittances of the etalon were calculated to analyze the performance of the laser at the three lines. Furthermore, a computational model of a three-wavelength laser based on rate equations was employed to examine the line selectivity of the three lines near 1.1 μm at different tilting angles of the etalon. [ABSTRACT FROM AUTHOR]

Subjects :: *ND-YAG lasers
*DIODES
*LASER beams
*WAVELENGTHS
*INTERFEROMETRY
*PERFORMANCE evaluation
*MATHEMATICAL models
*GEOMETRIC analysis

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