Band gaps and lattice parameters of 0.9 μm thick In[sub x]Ga[sub 1-x]N films for 0≤x≤0.140.

The c[sub 0] lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In[sub x]Ga[sub 1-x]N films with x=0, 0.045, 0.085, and 0.140 were examined. The c[sub 0] lattice parameter followed Vegard’s law using c[sub 0]=0.5185 nm for GaN and c[sub 0]=0.569 nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E[sub g]=3.41-7.31x+14.99x[sup 2] for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]