Cite
The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC-SiO[sub2] Interface.
MLA
Sheridan, David C., et al. “The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC-SiO[Sub2] Interface.” IEEE Transactions on Nuclear Science, vol. 48, no. 6, Dec. 2001, p. 2229. EBSCOhost, https://doi.org/10.1109/23.983200.
APA
Sheridan, D. C., Chung, G., Clark, S., & Cressler, J. D. (2001). The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC-SiO[sub2] Interface. IEEE Transactions on Nuclear Science, 48(6), 2229. https://doi.org/10.1109/23.983200
Chicago
Sheridan, David C., Gilyong Chung, Steve Clark, and John D. Cressler. 2001. “The Effects of High-Dose Gamma Irradiation on High-Voltage 4H-SiC Schottky Diodes and the SiC-SiO[Sub2] Interface.” IEEE Transactions on Nuclear Science 48 (6): 2229. doi:10.1109/23.983200.