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Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model.
- Source :
-
Applied Physics Letters . 8/8/2011, Vol. 99 Issue 6, p063507. 3p. 3 Graphs. - Publication Year :
- 2011
-
Abstract
- The conduction mechanism of metal oxide resistive switching memory is debated in the literature. We measured the I-V characteristics below the switching voltages through TiN/HfOx/Pt memory stack and found the conduction cannot be described by the commonly used Poole-Frenkel model, because the fitted dielectric constant and the trap energy are unreasonable as compared to their known values. Therefore, we provide an alternate viewpoint based on a trap-assisted-tunneling model. Agreement of the bias polarity/temperature/resistance state-dependent conduction behavior was achieved between this model and experimental data. And insights for the multilevel capability due to the control of tunneling distance were obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 64354547
- Full Text :
- https://doi.org/10.1063/1.3624472