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Short channel device performance of amorphous InGaZnO thin film transistor.
- Source :
-
Applied Physics Letters . 8/22/2011, Vol. 99 Issue 8, p082104. 3p. 3 Graphs. - Publication Year :
- 2011
-
Abstract
- Short channel device performance of deep-submicron gate length oxide thin film transistor (TFT) with amorphous InGaZnO (a-IGZO) active semiconductor is presented. Remarkable electrical properties of short channel oxide TFT were achieved utilizing crucial structure and material optimization such as self aligned gate structure with homo junction, multi-channel with rounded corners, and high-κ gate dielectric. It was found that various device performance parameters of short channel-oxide TFTs were significantly influenced by materials, processes, and structural geometry, which should be more carefully designed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 65024767
- Full Text :
- https://doi.org/10.1063/1.3623426