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High-performance space-charge-limited transistors with well-ordered nanoporous aluminum base electrode.
- Source :
-
Applied Physics Letters . 8/29/2011, Vol. 99 Issue 9, p093306. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2011
-
Abstract
- A large-area and periodically patterned nanoporous aluminum grid with controlled pore size was fabricated by poly(ethylene oxide)-assisted self-assembly of polystyrene nanospheres. The grid layer was used as the shadow mask for the creation of nanochannels in a polymeric dielectric layer, as well as the base electrode in a space-charge limited transistor prepared thereafter. A high performance device with poly(3-hexylthiophene) as conducting semiconductor was achieved, yielding a high on-current output of ∼12 mA/cm2 and a high on-off ratio of ∼2 × 104 at a collector voltage of -2.0 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 65143938
- Full Text :
- https://doi.org/10.1063/1.3632045