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Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure.
- Source :
-
Journal of Applied Physics . Sep2011, Vol. 110 Issue 5, p053703. 6p. - Publication Year :
- 2011
-
Abstract
- We investigated multilevel resistance switching characteristics of the thin FeOx transition layer in a TiN/SiO2/FeOx/Fe structure by controlling the current compliance and stopped voltage during the set and reset processes, respectively. It is observed that the resistive state could be easily tunable by controlling external electric conditions. The multilevel memristive mechanism was characterized by distinguishing the electrical behaviors statistically, inferring that the reset process is associated with the mobile-ion-assisted electrochemical redox. Moreover, the set process is also modeled by power dissipation behaviors. The presented mathematical and physical model provides a possibility to elucidate a universal mechanism for bipolar multilevel memristor. [ABSTRACT FROM AUTHOR]
- Subjects :
- *IRON oxides
*METALLIC oxides
*FERROUS oxide
*ELECTROCHEMISTRY
*MATHEMATICAL models
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 110
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 65458593
- Full Text :
- https://doi.org/10.1063/1.3630119