Cite
GaN-based HEMTs tested under high temperature storage test
MLA
Marcon, D., et al. “GaN-Based HEMTs Tested under High Temperature Storage Test.” Microelectronics Reliability, vol. 51, no. 9–11, Sept. 2011, pp. 1717–20. EBSCOhost, https://doi.org/10.1016/j.microrel.2011.06.062.
APA
Marcon, D., Kang, X., Viaene, J., Van Hove, M., Srivastava, P., Decoutere, S., Mertens, R., & Borghs, G. (2011). GaN-based HEMTs tested under high temperature storage test. Microelectronics Reliability, 51(9–11), 1717–1720. https://doi.org/10.1016/j.microrel.2011.06.062
Chicago
Marcon, D., X. Kang, J. Viaene, M. Van Hove, P. Srivastava, S. Decoutere, R. Mertens, and G. Borghs. 2011. “GaN-Based HEMTs Tested under High Temperature Storage Test.” Microelectronics Reliability 51 (9–11): 1717–20. doi:10.1016/j.microrel.2011.06.062.