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Amorphous silicon-carbon based p-i-n structures for electron flux conversion.

Authors :
Feoktistov, N.A.
Florinskii, V.Yu.
Morozova, L.E.
Pevtsov, A.B.
Source :
International Journal of Electronics. Mar1995, Vol. 78 Issue 3, p533. 6p.
Publication Year :
1995

Abstract

Presents a study of the collection efficiency of electron-hole pairs in amorphous silicon-carbon based p-i-n structures under keV electronic irradiation. RF plasma deposition; Scanning electronic microscopy; Current-voltage characteristics and spectral dependence of the short-circuit current.

Subjects

Subjects :
*EXCITON theory
*AMORPHOUS substances

Details

Language :
English
ISSN :
00207217
Volume :
78
Issue :
3
Database :
Academic Search Index
Journal :
International Journal of Electronics
Publication Type :
Academic Journal
Accession number :
6575562
Full Text :
https://doi.org/10.1080/00207219508926185
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