Cite
Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances.
MLA
Wei, Xiuqin, et al. “Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances.” IEEE Transactions on Circuits & Systems. Part I: Regular Papers, vol. 58, no. 10, Oct. 2011, pp. 2556–65. EBSCOhost, https://doi.org/10.1109/TCSI.2011.2123490.
APA
Wei, X., Sekiya, H., Kuroiwa, S., Suetsugu, T., & Kazimierczuk, M. K. (2011). Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances. IEEE Transactions on Circuits & Systems. Part I: Regular Papers, 58(10), 2556–2565. https://doi.org/10.1109/TCSI.2011.2123490
Chicago
Wei, Xiuqin, Hiroo Sekiya, Shingo Kuroiwa, Tadashi Suetsugu, and Marian K. Kazimierczuk. 2011. “Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances.” IEEE Transactions on Circuits & Systems. Part I: Regular Papers 58 (10): 2556–65. doi:10.1109/TCSI.2011.2123490.