Cite
Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory.
MLA
Sun, Jing, and Xuejun Zheng. “Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory.” IEEE Transactions on Electron Devices, vol. 58, no. 10, Oct. 2011, pp. 3559–65. EBSCOhost, https://doi.org/10.1109/TED.2011.2162335.
APA
Sun, J., & Zheng, X. (2011). Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory. IEEE Transactions on Electron Devices, 58(10), 3559–3565. https://doi.org/10.1109/TED.2011.2162335
Chicago
Sun, Jing, and Xuejun Zheng. 2011. “Modeling of MFIS-FETs for the Application of Ferroelectric Random Access Memory.” IEEE Transactions on Electron Devices 58 (10): 3559–65. doi:10.1109/TED.2011.2162335.