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Phosphorus ion implantation and annealing induced n-type conductivity and microstructure evolution in ultrananocrystalline diamond films.
- Source :
-
Applied Physics Letters . 9/26/2011, Vol. 99 Issue 13, p131902. 3p. 1 Chart, 3 Graphs. - Publication Year :
- 2011
-
Abstract
- We report n-type conductivity in phosphorus ion implanted ultrananocrystalline diamond films annealed at 800 °C and above. The amorphous carbon transits to diamond with an increase of stress after 900 °C annealing, which exhibits lower resistivity with Hall mobility of 143 cm2/Vs. After 1000 °C annealing, the diamond transits to amorphous carbon with the stress release, which has higher carrier concentration and lower Hall mobility. Both P+-implanted nano-sized diamond grains and amorphous carbon give contributions to the n-type conductivity in the films. The microstructure evolution and electrical properties are relative to the hydrogen diffusion and desorption under high temperature annealing. [ABSTRACT FROM AUTHOR]
- Subjects :
- *STEREOLOGY
*NONMETALS
*SOLUTION (Chemistry)
*CHEMICAL elements
*BORON
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 66185056
- Full Text :
- https://doi.org/10.1063/1.3641458