Significance of Al on the morphological and optical properties of Ti1−x Al x N thin films

Abstract: TiN and Ti1−x Al x N thin films with different aluminum concentrations (x =0.35, 0.40, 0.55, 0.64 and 0.81) were synthesized by reactive magnetron co-sputtering technique. The structure, surface morphology and optical properties were examined using Grazing Incidence X-ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Raman spectroscopy and spectroscopic ellipsometry, respectively. The structure of the films were found to be of rocksalt type (NaCl) for x =0.0–0.64 and X-ray amorphous for x =0.81. AFM topographies show continuous mound like structure for the films of x between 0.0 and 0.64, whereas the film with x =0.81 showed smooth surface with fine grains. Micro-Raman spectroscopic studies indicate structural phase separation of AlN from TiAlN matrix for x >0.40. Ti1−x Al x N has the tendency for decomposition with the increase of Al concentration whereas c-TiN and hcp-AlN are stable mostly. The optical studies carried out by spectroscopic ellipsometry measurements showed a change from metallic to insulating behavior with the increase in x. These films are found to be an insulator beyond x =0.81. [Copyright &y& Elsevier]