High Sensitivity Photodetector Using Si/Ge/GaAs Metal Semiconductor Field Effect Transistor (MESFET).

The paper presents the comparative study of MESFET as photodetector for three different channel materials: Si, Ge and GaAs using ATLAS 3D device simulator. Common semi-insulating substrate i.e. sapphire is used for all the three MESFETs. Effect of illumination on the performance of the device has been studied in detail in terms of ratio of dark current to current under illumination, threshold voltage shift and enhanced drain current. [ABSTRACT FROM AUTHOR]