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Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces.
- Source :
-
Physical Review B: Condensed Matter & Materials Physics . Jun2011, Vol. 83 Issue 23, p233301:1-233301:4. 4p. - Publication Year :
- 2011
-
Abstract
- Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10980121
- Volume :
- 83
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Physical Review B: Condensed Matter & Materials Physics
- Publication Type :
- Academic Journal
- Accession number :
- 66800560
- Full Text :
- https://doi.org/10.1103/PhysRevB.83.233301