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Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation.
- Source :
-
IEEE Transactions on Electron Devices . Nov2011, Vol. 58 Issue 11, p4004-4010. 7p. - Publication Year :
- 2011
-
Abstract
- This paper presents an evaluation of laterally double-diffused MOS transistors in synchronous dc–dc buck converters using a physical-based mixed device and circuit simulation. It is observed that impact ionization of the low-side transistor can be very high after the dead-time drain overshoot voltage point. In addition, heavy ion irradiation degrades power MOSFET performance and may lead to a potential circuit malfunction due to a significant increase in transient current if heavy ions strike the dc–dc buck converter at a critical time during switching. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 66815826
- Full Text :
- https://doi.org/10.1109/TED.2011.2166076