Cite
Metal–Oxide–High-k -Oxide–Silicon Memory Device Using a Ti-Doped \Dy2\O3 Charge-Trapping Layer and \Al2\O3 Blocking Layer.
MLA
Chen, Fa-Hsyang, et al. “Metal–Oxide–High-k -Oxide–Silicon Memory Device Using a Ti-Doped \Dy2\O3 Charge-Trapping Layer and \Al2\O3 Blocking Layer.” IEEE Transactions on Electron Devices, vol. 58, no. 11, Nov. 2011, pp. 3847–51. EBSCOhost, https://doi.org/10.1109/TED.2011.2165285.
APA
Chen, F.-H., Pan, T.-M., & Chiu, F.-C. (2011). Metal–Oxide–High-k -Oxide–Silicon Memory Device Using a Ti-Doped \Dy2\O3 Charge-Trapping Layer and \Al2\O3 Blocking Layer. IEEE Transactions on Electron Devices, 58(11), 3847–3851. https://doi.org/10.1109/TED.2011.2165285
Chicago
Chen, Fa-Hsyang, Tung-Ming Pan, and Fu-Chien Chiu. 2011. “Metal–Oxide–High-k -Oxide–Silicon Memory Device Using a Ti-Doped \Dy2\O3 Charge-Trapping Layer and \Al2\O3 Blocking Layer.” IEEE Transactions on Electron Devices 58 (11): 3847–51. doi:10.1109/TED.2011.2165285.