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Random Telegraph Signals in a Radiation-Hardened CMOS Active Pixel Sensor.
- Source :
-
IEEE Transactions on Nuclear Science . Feb2002 Part 2 of 2, Vol. 49 Issue 1, p249. 9p. 3 Diagrams, 7 Graphs. - Publication Year :
- 2002
-
Abstract
- Discusses the random telegraph signal (RTS) behavior of the dark current in a radiation-hardened complementary metal oxide semiconductor active pixel sensor. Data on the dark current pedestal, RTS amplitudes, time constraints and temperature behavior; Discussion on a general model for the introduction probability of RTS behavior; Correlation between probability of RTS occurrence and dark current density.
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 49
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 6685266