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Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations.
- Source :
-
Applied Physics Letters . 11/7/2011, Vol. 99 Issue 19, p192110. 3p. 3 Graphs. - Publication Year :
- 2011
-
Abstract
- The nitrogen-doped Ge2Sb2Te5 (GST) programmable metallization cell is investigated to address the low switching voltage and need for a high resistance ratio, which are critical issues for the filed-programmable gate array (FPGA) configuration. Nitrogen doping of GST yields Ge-N covalent bonds, as confirmed by x-ray photoelectron spectroscopy and Raman spectroscopy; this increases the resistivity of GST. Consequently, an excellent resistance ratio (∼107) with appropriate operating voltage and stable retention properties more than for 104 s at 85 °C are achieved. The results indicate that the film is a suitable alternative candidate for the logic switch in static-random-access-memory-based FPGA technology. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 67170486
- Full Text :
- https://doi.org/10.1063/1.3659692