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Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity.
- Source :
-
Journal of Applied Physics . Nov2011, Vol. 110 Issue 9, p093108. 4p. 7 Graphs. - Publication Year :
- 2011
-
Abstract
- We investigated the narrowband ultraviolet emission properties of Al0.94Gd0.06N phosphor thin films pumped by an electron beam. An extremely narrow luminescence line, which was less than 1 nm from the intra-orbital f-f transition in Gd3+ ions, was confirmed at 318 nm. The corresponding emission efficiency was improved by decreasing the growth temperature. The extended X-ray absorption fine structure analysis of the local atomic structure revealed that a low-temperature growth led to the formation of a uniform atomic configuration around Gd, which was found to play a key role in improving the luminescence intensity of the films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 110
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 67225629
- Full Text :
- https://doi.org/10.1063/1.3658845