Cite
Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices.
MLA
Jeyasingh, Rakesh G. D., et al. “Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices.” IEEE Transactions on Electron Devices, vol. 58, no. 12, Dec. 2011, pp. 4370–76. EBSCOhost, https://doi.org/10.1109/TED.2011.2169798.
APA
Jeyasingh, R. G. D., Kuzum, D., & Wong, H.-S. P. (2011). Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices. IEEE Transactions on Electron Devices, 58(12), 4370–4376. https://doi.org/10.1109/TED.2011.2169798
Chicago
Jeyasingh, Rakesh G. D., Duygu Kuzum, and H.-S. Philip Wong. 2011. “Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices.” IEEE Transactions on Electron Devices 58 (12): 4370–76. doi:10.1109/TED.2011.2169798.