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Effect of Si doping on near-infrared emission and energy transfer of Bismuth in silicate glasses
- Source :
-
Journal of Non-Crystalline Solids . Jan2012, Vol. 358 Issue 2, p261-264. 4p. - Publication Year :
- 2012
-
Abstract
- Abstract: We have studied the effects of Si doping on the near infrared (NIR) luminescence observed in low Bi doped ( 0.1mol% ) glasses and the energy transfer from Yb3+ to Bi. The broadband near infrared can only be observed when Si is introduced in the Bi-doped glass. The origin of this fluorescence can be attributed to Bi ions at low valence. Efficient energy transfer from Yb3+ to Bi NIR active ions is achieved by co-doping of Si. There is an increment of about ~29 times of the emission intensity from Bi-related active center as the Yb3+ concentration varies from 0 to 2.0mol% and the amount of Si is 0.05mol% under 980nm excitation. The possible mechanism of energy transfer from Yb3+ to Bi is also discussed. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00223093
- Volume :
- 358
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Non-Crystalline Solids
- Publication Type :
- Academic Journal
- Accession number :
- 67626632
- Full Text :
- https://doi.org/10.1016/j.jnoncrysol.2011.09.023