A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology.

A 60 GHz monolithic low-noise amplifier (LNA) fabricated with 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistors is presented.Using a three-stage cascaded topology and in-stage transmission lines, the LNA is designed using 5 V power supply voltage. Measured results of the LNA show the peak gain of 13.5 dB and the lowest noise figure of 5.15 dB around 61 GHz, and the 1 dB compression point (P1dB) of the LNA is −10 dBm. The LNA also demonstrates a complete design flow for millimeter-wave applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 54:329-332, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26525 [ABSTRACT FROM AUTHOR]