Back to Search
Start Over
Publisher's Note: 'Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure' [J. Appl. Phys. 110, 053703 (2011)].
- Source :
-
Journal of Applied Physics . Dec2011, Vol. 110 Issue 11, p119904. 1p. - Publication Year :
- 2011
-
Abstract
- A correction is noted to the online edition of the article “Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure” which was first published on September 1, 2011.
- Subjects :
- *BIPOLAR transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 110
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 69702935
- Full Text :
- https://doi.org/10.1063/1.3668129