XPS and RBS investigation of TiN x O y films prepared by vacuum arc discharge

Abstract: Three titanium oxynitride films have been prepared by vacuum arc discharge technique at different chamber temperatures (50°C, 150°C and 300°C). X-ray photoelectron spectroscopy was used to reveal the elemental and chemical compositions by analyzing high resolution spectra of Ti 2p3/2, N 1s and O 1s. Higher temperatures were found to promote the nitride components and to produce nitrogen-rich films. Homogeneity and thickness of the films have been estimated by means of Rutherford Back Scattering technique, which showed that the film thickness increased with the increasing of temperature. A significant improvement in the crystalline quality and texture when increasing the temperature was found by X-ray diffraction technique. Electrical resistivity of the films was measured at room temperature and was found to decrease from 46.6μΩcm down to 26.3μΩcm for the samples prepared at 50°C and 300°C, respectively. [Copyright &y& Elsevier]