Active-layer thickness effects related with microstructure, electrical properties and flicker noise in polycrystalline ZnO thin film transistors.

MLA

Jeong, K. S., et al. “Active-Layer Thickness Effects Related with Microstructure, Electrical Properties and Flicker Noise in Polycrystalline ZnO Thin Film Transistors.” AIP Conference Proceedings, vol. 1399, no. 1, Dec. 2011, pp. 891–92. EBSCOhost, https://doi.org/10.1063/1.3666662.

APA

Jeong, K. S., Kim, Y. M., Park, J. G., Yang, S. D., Kim, Y. S., & Lee, G. W. (2011). Active-layer thickness effects related with microstructure, electrical properties and flicker noise in polycrystalline ZnO thin film transistors. AIP Conference Proceedings, 1399(1), 891–892. https://doi.org/10.1063/1.3666662

Chicago

Jeong, K. S., Y. M. Kim, J. G. Park, S. D. Yang, Y. S. Kim, and G. W. Lee. 2011. “Active-Layer Thickness Effects Related with Microstructure, Electrical Properties and Flicker Noise in Polycrystalline ZnO Thin Film Transistors.” AIP Conference Proceedings 1399 (1): 891–92. doi:10.1063/1.3666662.