Ferroelectric properties of vanadium-doped Bi[sub 4]Ti[sub 3]O[sub 12] thin films deposited by a sol–gel method.

We report the enhancement of ferroelectric properties in vanadium-doped Bi[sub 4]Ti[sub 3]O[sub 12] (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P[sub r]) of 15.9 µC/cm², higher than the value for BIT, 12.5 µC/cm². The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4 × 10[sup 10] switching cycles. [ABSTRACT FROM AUTHOR]