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Ferroelectric properties of vanadium-doped Bi[sub 4]Ti[sub 3]O[sub 12] thin films deposited by a sol–gel method.
- Source :
-
Journal of Applied Physics . 8/15/2002, Vol. 92 Issue 4, p2213. 3p. 5 Graphs. - Publication Year :
- 2002
-
Abstract
- We report the enhancement of ferroelectric properties in vanadium-doped Bi[sub 4]Ti[sub 3]O[sub 12] (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P[sub r]) of 15.9 µC/cm², higher than the value for BIT, 12.5 µC/cm². The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4 × 10[sup 10] switching cycles. [ABSTRACT FROM AUTHOR]
- Subjects :
- *FERROELECTRICITY
*VANADIUM
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 92
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7066728
- Full Text :
- https://doi.org/10.1063/1.1494840